Growth of single crystal GaN on a Si substrate using oxidized AlAs as an intermediate layer
نویسندگان
چکیده
We demonstrate that single-crystal hexagonal GaN can be grown by metal-organic chemical vapor deposition on an aluminum oxide compound (AlO x ) layer utilized as an intermediate layer between GaN and a Si(1 1 1) substrate. The surface morphology of GaN grown on the AlO x /Si(1 1 1) substrate is found to be very sensitive to both the GaN buffer-layer thickness and the AlO x thickness. Contact mode atomic force microscopy (C-AFM) observation indicates that the AlO x surface is composed of domain-like features with varying surface heights. A possible clue for a mechanism by which single crystal GaN grows on AlO x is discussed by comparing the domain-like surface features observed by C-AFM. ( 1998 Elsevier Science B.V. All rights reserved. PACS: 81.15.Gh; 81.10.Bk; 81.05.Ea; 78.60.Hk; 81.65.Mq; 68.35.Bs
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تاریخ انتشار 1998